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BSH202,215
Power MOSFET, P Channel, 30 V, 520 mA, 0.9 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH202,215
Newark Part No.71T6945
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id520mA
Drain Source On State Resistance0.9ohm
On Resistance Rds(on)0.63ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd417mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation417mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSH202 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
- Low threshold voltage
- Fast switching
- Logic level compatible
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
520mA
On Resistance Rds(on)
0.63ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
417mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.9ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
417mW
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate