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BSS138BK,215
Power MOSFET, N Channel, 60 V, 360 mA, 1 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138BK,215
Newark Part No.61T7486
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id360mA
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd350mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Logic Level Compatible
- Very Fast Switching
- ESD Protection Upto 1.5kV
- AEC-Q101 Qualified
Applications
Audio, Signal Processing, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
360mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
350mW
Gate Source Threshold Voltage Max
1.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate