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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBHV8115Z,115
Newark Part No.84R0175
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max150V
Collector Emitter Voltage V(br)ceo150V
Continuous Collector Current1A
Power Dissipation700mW
Power Dissipation Pd700mW
DC Collector Current1A
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency30MHz
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
- PNP complement is PBHV9115Z
- V8115Z Marking code
Applications
Industrial, Lighting, Automotive, Motor Drive & Control, Communications & Networking, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
150V
Power Dissipation
700mW
DC Collector Current
1A
Transistor Mounting
Surface Mount
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage Max
150V
Continuous Collector Current
1A
Power Dissipation Pd
700mW
Transistor Case Style
SOT-223
No. of Pins
4Pins
DC Current Gain hFE Min
250hFE
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for PBHV8115Z,115
1 Product Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability