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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      PMDT290UCE,115

                      Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm

                      Date/Lot Code

                      NEXPERIA PMDT290UCE,115
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerNEXPERIA
                      Manufacturer Part NoPMDT290UCE,115
                      Newark Part No.75T8010
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      4,755 In Stock

                      Need more?

                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$0.473
                      10+$0.369
                      100+$0.199
                      500+$0.173
                      1000+$0.146
                      2500+$0.130
                      12000+$0.116
                      28000+$0.114
                      Price for:Each
                      Minimum: 5
                      Multiple: 5
                      $2.36
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerNEXPERIA
                      Manufacturer Part NoPMDT290UCE,115
                      Newark Part No.75T8010
                      Technical Datasheet

                      Data Sheet

                      Channel TypeComplementary N and P Channel
                      Continuous Drain Current Id800mA
                      Drain Source Voltage Vds N Channel20V
                      Drain Source Voltage Vds P Channel20V
                      Drain Source Voltage Vds20V
                      Continuous Drain Current Id N Channel800mA
                      Continuous Drain Current Id P Channel800mA
                      Drain Source On State Resistance N Channel0.29ohm
                      Drain Source On State Resistance P Channel0.29ohm
                      Transistor Case StyleSOT-666
                      No. of Pins6Pins
                      Power Dissipation N Channel330mW
                      Power Dissipation P Channel330mW
                      Operating Temperature Max150°C
                      Product Range-
                      Qualification-
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The PMDT290UCE is a N/P-channel complementary enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.

                      • Very fast switching characteristics
                      • ESD protection up to 2kV

                      Applications

                      Industrial, Power Management

                      Technical Specifications

                      Channel Type

                      Complementary N and P Channel

                      Drain Source Voltage Vds N Channel

                      20V

                      Drain Source Voltage Vds

                      20V

                      Continuous Drain Current Id P Channel

                      800mA

                      Drain Source On State Resistance P Channel

                      0.29ohm

                      No. of Pins

                      6Pins

                      Power Dissipation P Channel

                      330mW

                      Product Range

                      -

                      MSL

                      MSL 1 - Unlimited

                      Continuous Drain Current Id

                      800mA

                      Drain Source Voltage Vds P Channel

                      20V

                      Continuous Drain Current Id N Channel

                      800mA

                      Drain Source On State Resistance N Channel

                      0.29ohm

                      Transistor Case Style

                      SOT-666

                      Power Dissipation N Channel

                      330mW

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (21-Jan-2025)

                      Technical Docs (3)

                      Technical Data Sheet EN

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

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