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PMDT290UCE,115
MOSFET, N/P CHANNEL, 20/20V, 800/550MA,SOT666
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
5 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 0,638 $ |
| 10+ | 0,498 $ |
| 100+ | 0,269 $ |
| 500+ | 0,233 $ |
| 1000+ | 0,198 $ |
| 2500+ | 0,176 $ |
| 12000+ | 0,162 $ |
| 28000+ | 0,160 $ |
Prix pour :Each
Minimum: 5
Multiple: 5
3,19 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantNEXPERIA
Réf. FabricantPMDT290UCE,115
Code Commande75T8010
Fiche technique
Channel TypeComplementary N and P Channel
Continuous Drain Current Id800mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel800mA
Continuous Drain Current Id P Channel800mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-666
No. of Pins6Pins
Power Dissipation N Channel330mW
Power Dissipation P Channel330mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The PMDT290UCE is a N/P-channel complementary enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Very fast switching characteristics
- ESD protection up to 2kV
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
800mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
330mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
800mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
800mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-666
Power Dissipation N Channel
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits