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MRFE6VP100HR5
RF FET Transistor, 133 VDC, 100 W, 1.8 MHz, 2 GHz, NI-780
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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP100HR5
Newark Part No.05W8099
Technical Datasheet
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation100W
Operating Frequency Min1.8MHz
Power Dissipation Pd100W
Operating Frequency Max2GHz
Transistor Case StyleNI-780
No. of Pins4Pins
RF Transistor CaseNI-780
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Drain Source Voltage Vds
133VDC
Power Dissipation
100W
Power Dissipation Pd
100W
Transistor Case Style
NI-780
RF Transistor Case
NI-780
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
2GHz
No. of Pins
4Pins
Operating Temperature Max
150°C
Transistor Mounting
Flange
MSL
-
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate