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| Quantity | Price |
|---|---|
| 1+ | $8.480 |
| 10+ | $7.230 |
| 25+ | $6.200 |
| 50+ | $5.160 |
| 100+ | $5.120 |
| 250+ | $5.080 |
| 900+ | $4.880 |
Price for:Each
Minimum: 1
Multiple: 1
$8.48
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDA28N50
Newark Part No.54AH8611
Product RangeUniFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id28A
On Resistance Rds(on)0.122ohm
Drain Source On State Resistance0.122ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation310W
Power Dissipation Pd310W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.122ohm
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Power Dissipation
310W
No. of Pins
3Pins
Product Range
UniFET
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.122ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
310W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability