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| Quantity | Price |
|---|---|
| 1+ | $1.940 |
| 10+ | $1.560 |
| 25+ | $1.440 |
| 50+ | $1.300 |
| 100+ | $1.170 |
| 250+ | $1.100 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD5N60NZTM
Newark Part No.99AC9159
Product RangeUniFET II
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4A
On Resistance Rds(on)1.65ohm
Drain Source On State Resistance1.65ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd83W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET II
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.65ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
83W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
UniFET II
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
1.65ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for FDD5N60NZTM
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability