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FDP52N20
MOSFET Transistor, N Channel, 52 A, 200 V, 41 mohm, 10 V, 5 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $4.380 |
| 10+ | $2.600 |
| 100+ | $2.480 |
| 500+ | $2.130 |
| 1000+ | $2.100 |
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Multiple: 1
$4.38
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP52N20
Newark Part No.31Y1386
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id52A
Drain Source On State Resistance0.041ohm
On Resistance Rds(on)0.041ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd357W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation357W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
357W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
52A
On Resistance Rds(on)
0.041ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
357W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability