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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT1N60CTF-WS
Newark Part No.31Y1559
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id200mA
On Resistance Rds(on)9.3ohm
Drain Source On State Resistance9.3ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.1W
Gate Source Threshold Voltage Max4V
Power Dissipation2.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
9.3ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source On State Resistance
9.3ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.1W
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability