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NTB190N65S3HF
MOSFET, N-CH, 20A, 650V, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTB190N65S3HF
Newark Part No.99AC9406
Product RangeSUPERFET III FRFET
Technical Datasheet
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 1+ | $7.660 |
| 10+ | $6.150 |
| 25+ | $5.680 |
| 50+ | $5.200 |
| 100+ | $4.730 |
| 250+ | $4.420 |
| 500+ | $4.100 |
| 1600+ | $3.950 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$7.66
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTB190N65S3HF
Newark Part No.99AC9406
Product RangeSUPERFET III FRFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20A
On Resistance Rds(on)0.161ohm
Drain Source On State Resistance0.161ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd162W
Gate Source Threshold Voltage Max5V
Power Dissipation162W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III FRFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.161ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
SUPERFET III FRFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.161ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
162W
Power Dissipation
162W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for NTB190N65S3HF
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability