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2N5191G.
Bipolar (BJT) Single Transistor, NPN, 60 V, 4 A, 40 W, TO-225AA, Through Hole
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Manufacturer Standard Lead Time: 10 week(s)
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| Quantity | Price |
|---|---|
| 500+ | $0.882 |
| 1000+ | $0.769 |
| 2500+ | $0.757 |
Price for:Each
Minimum: 500
Multiple: 1
$441.00
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5191G.
Newark Part No.26AC6362
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current4A
Power Dissipation40W
Power Dissipation Pd40W
DC Collector Current4A
DC Current Gain hFE2hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-225AA
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min2hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation
40W
DC Collector Current
4A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
2hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
4A
Power Dissipation Pd
40W
DC Current Gain hFE
2hFE
Transistor Case Style
TO-225AA
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate