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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5247
Newark Part No.58K2804
Technical Datasheet
Breakdown Voltage Vbr-30V
Gate Source Breakdown Voltage Max-30V
Zero Gate Voltage Drain Current Idss Min8mA
Zero Gate Voltage Drain Current Max24mA
Gate Source Cutoff Voltage Max-8V
Transistor Case StyleTO-92
Transistor TypeRF FET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingThrough Hole
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Breakdown Voltage Vbr
-30V
Zero Gate Voltage Drain Current Idss Min
8mA
Gate Source Cutoff Voltage Max
-8V
Transistor Type
RF FET
Channel Type
N Channel
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Gate Source Breakdown Voltage Max
-30V
Zero Gate Voltage Drain Current Max
24mA
Transistor Case Style
TO-92
No. of Pins
3 Pin
Transistor Mounting
Through Hole
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate