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Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Quantity | Price |
---|---|
30000+ | $0.023 |
Price for:Each (Supplied on Full Reel)
Minimum: 30000
Multiple: 30000
$690.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC856BWT1G
Newark Part No.98H0506
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max65V
Collector Emitter Voltage V(br)ceo65V
Continuous Collector Current100mA
DC Collector Current100mA
Power Dissipation150mW
Power Dissipation Pd150mW
Transistor MountingSurface Mount
DC Current Gain hFE150hFE
No. of Pins3Pins
Transistor Case StyleSC-70
Transition Frequency100MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The BC856BWT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in a package which is designed for low power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
65V
DC Collector Current
100mA
Power Dissipation Pd
150mW
DC Current Gain hFE
150hFE
Transistor Case Style
SC-70
DC Current Gain hFE Min
150hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
65V
Continuous Collector Current
100mA
Power Dissipation
150mW
Transistor Mounting
Surface Mount
No. of Pins
3Pins
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for BC856BWT1G
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate