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BS170-D75Z
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-226AA, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBS170-D75Z
Newark Part No.48AC0677
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)1.2ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd830mW
Gate Source Threshold Voltage Max2.1V
Transistor Case StyleTO-226AA
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
830mW
Transistor Case Style
TO-226AA
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
Power Dissipation
830mW
Operating Temperature Max
150°C
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability