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FDB13AN06A0
Power MOSFET, N Channel, 60 V, 62 A, 0.0135 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 100+ | $1.620 |
Price for:Each (Supplied on Cut Tape)
Minimum: 800
Multiple: 800
$1,296.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB13AN06A0
Newark Part No.50H4190
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id62A
Drain Source On State Resistance0.0135ohm
On Resistance Rds(on)0.0135ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd115W
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max4V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0135ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
115W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
62A
On Resistance Rds(on)
0.0135ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-263AB
Power Dissipation
115W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate