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| Quantity | Price |
|---|---|
| 1+ | $0.097 |
| 25+ | $0.097 |
| 50+ | $0.097 |
| 100+ | $0.097 |
| 250+ | $0.097 |
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Multiple: 1
$0.10
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC855N
Newark Part No.84W8850
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.1A
On Resistance Rds(on)0.0207ohm
Drain Source On State Resistance0.0207ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.6W
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max2V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Alternatives for FDC855N
1 Product Found
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0207ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
2V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6.1A
Drain Source On State Resistance
0.0207ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability