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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD2582
Newark Part No.31Y1352
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id21A
On Resistance Rds(on)0.058ohm
Drain Source On State Resistance58mohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd95W
Gate Source Threshold Voltage Max4V
Power Dissipation95W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDD2582 is a N-channel MOSFET produced PowerTrench® process. It is suitable for use in high voltage synchronous rectification, electronic valve train system, DC-to-DC converters and off-line UPS application.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
- AEC-Q101 Qualified
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.058ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
58mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
95W
Power Dissipation
95W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Alternatives for FDD2582
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability