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FDD3672
Power MOSFET, N Channel, 100 V, 44 A, 0.028 ohm, TO-252AA, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.381 |
| 10+ | $0.381 |
| 25+ | $0.381 |
| 50+ | $0.381 |
| 100+ | $0.381 |
| 250+ | $0.381 |
| 500+ | $0.381 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD3672
Newark Part No.58K1434
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id44A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.024ohm
Transistor MountingSurface Mount
Power Dissipation Pd135W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-252AA
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
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Product Overview
The FDD3672 is an UltraFET Trench N-channel MOSFET optimized efficiency at high frequencies. It can be suitable for synchronous rectification, DC-to-DC converters and off-line UPS applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-252AA
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
44A
On Resistance Rds(on)
0.024ohm
Power Dissipation Pd
135W
Gate Source Threshold Voltage Max
4V
Power Dissipation
135W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability