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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD7N20TM
Newark Part No.31Y1361
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5A
On Resistance Rds(on)0.58ohm
Drain Source On State Resistance0.69ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd43W
Gate Source Threshold Voltage Max5V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDD7N20TM is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 5nC Typical low gate charge
- 5pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.58ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
0.69ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
43W
Power Dissipation
43W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Alternatives for FDD7N20TM
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability