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FDMS3572
Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $4.220 |
| 10+ | $2.830 |
| 25+ | $2.620 |
| 50+ | $2.410 |
| 100+ | $2.200 |
| 250+ | $2.050 |
| 500+ | $1.910 |
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Multiple: 1
$4.22
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS3572
Newark Part No.61M6269
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id8.8A
On Resistance Rds(on)0.0165ohm
Drain Source On State Resistance0.0165ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.2V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMS3572 is an UItraFET Trench® N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS (ON), low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters.
- Low Miller charge
- Optimized efficiency at high frequencies
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.8A
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0165ohm
Transistor Case Style
Power 56
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
3.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability