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FDP3652
Power MOSFET, N Channel, 100 V, 61 A, 0.014 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.590 |
| 1000+ | $1.420 |
| 2500+ | $1.150 |
| 5000+ | $1.110 |
Price for:Each
Minimum: 800
Multiple: 800
$1,272.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP3652
Newark Part No.58K8847
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id61A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.014ohm
Transistor MountingThrough Hole
Power Dissipation Pd150W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
61A
Drain Source On State Resistance
0.014ohm
Power Dissipation Pd
150W
Transistor Case Style
TO-220AB
Power Dissipation
150W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate