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FDS2572
Power MOSFET, N Channel, 150 V, 4.9 A, 0.047 ohm, SOIC, Surface Mount
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| Quantity | Price |
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| 50+ | $0.308 |
| 100+ | $0.308 |
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| 1000+ | $0.308 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS2572
Newark Part No.96K9876
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id4.9A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.047ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDS2572
1 Product Found
Product Overview
The FDS2572 is an UltraFET® Trench N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS (ON), low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters, 48V I/P half-bridge/full-bridge, 24V forward and push-pull topologies.
- Low QRR body diode
- Maximized efficiency at high frequencies
- UIS Rated
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source On State Resistance
0.047ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate