Print Page
FDS89141
Dual MOSFET, N Channel, 100 V, 100 V, 3.5 A, 3.5 A, 0.047 ohm
Image is for illustrative purposes only. Please refer to product description.
7,720 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $4.300 |
| 10+ | $3.150 |
| 25+ | $2.840 |
| 50+ | $2.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$21.50
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS89141
Newark Part No.88T3365
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.047ohm
Drain Source On State Resistance P Channel0.047ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 18A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.047ohm
No. of Pins
8Pins
Power Dissipation P Channel
31W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds
100V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.047ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDS89141
1 Product Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability