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Quantity | Price |
---|---|
1+ | $7.590 |
10+ | $7.040 |
25+ | $5.930 |
50+ | $4.810 |
100+ | $4.620 |
250+ | $4.410 |
900+ | $4.230 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA40N25
Newark Part No.31Y1506
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id40A
On Resistance Rds(on)0.051ohm
Drain Source On State Resistance0.051ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd280W
Gate Source Threshold Voltage Max5V
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FQA40N25 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 82.5nC typical low gate charge
- 70pF typical low Crss
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.051ohm
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.051ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
280W
Power Dissipation
280W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability