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Available to Order
Manufacturer Standard Lead Time: 2 week(s)
Quantity | Price |
---|---|
1+ | $1.350 |
3000+ | $1.270 |
6000+ | $1.210 |
12000+ | $1.100 |
18000+ | $1.060 |
30000+ | $1.020 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$1,080.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB19N20LTM
Newark Part No.34C0397
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id21A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.14ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.13W
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max2V
Power Dissipation3.13W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQB19N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 31nC typical low gate charge
- 30pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.13W
Gate Source Threshold Voltage Max
2V
No. of Pins
2Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.14ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-263AB
Power Dissipation
3.13W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate