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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT7N10LTF
Newark Part No.87X8794
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.35ohm
On Resistance Rds(on)0.275ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd2W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 5.8nC typical low gate charge
- 10pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.35ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
On Resistance Rds(on)
0.275ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability