Print Page
Image is for illustrative purposes only. Please refer to product description.
2,653 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $0.120 |
25+ | $0.120 |
50+ | $0.120 |
100+ | $0.120 |
250+ | $0.120 |
500+ | $0.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.12
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMGSF2N02ELT1G
Newark Part No.09R9428
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.8A
On Resistance Rds(on)0.078ohm
Drain Source On State Resistance85mohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.25W
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The MGSF2N02ELT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
- Low RDS (ON) provides higher efficiency and extends battery life
- Miniature surface-mount package saves board space
- IDSS Specified at elevated temperature
- -55 to 150°C Operating temperature range
Applications
Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.078ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.8A
Drain Source On State Resistance
85mohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
Power Dissipation
1.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for MGSF2N02ELT1G
2 Products Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability