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MJ21196G
Bipolar (BJT) Single Transistor, Audio, NPN, 250 V, 16 A, 250 W, TO-3, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $11.550 |
| 10+ | $7.380 |
| 25+ | $7.010 |
| 50+ | $6.620 |
| 100+ | $6.250 |
| 300+ | $5.760 |
Price for:Each
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Multiple: 1
$11.55
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ21196G
Newark Part No.26K4525
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo250V
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation Pd250W
Power Dissipation250W
DC Collector Current16A
Transistor MountingThrough Hole
DC Current Gain hFE25hFE
No. of Pins2Pins
Transistor Case StyleTO-3
Transition Frequency4MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max200°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The MJ21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
250V
Power Dissipation Pd
250W
DC Collector Current
16A
DC Current Gain hFE
25hFE
Transistor Case Style
TO-3
DC Current Gain hFE Min
25hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
250V
Continuous Collector Current
16A
Power Dissipation
250W
Transistor Mounting
Through Hole
No. of Pins
2Pins
Transition Frequency
4MHz
Operating Temperature Max
200°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability