Print Page
MJD112T4G
Darlington Transistor, Darlington, NPN, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD112T4G
Newark Part No.10N9468
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current2A
Transition Frequency25MHz
Power Dissipation20W
Transistor MountingSurface Mount
No. of Pins3Pins
Transistor Case StyleTO-252 (DPAK)
DC Current Gain hFE Min12hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
Transition Frequency
25MHz
Transistor Mounting
Surface Mount
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
2A
Power Dissipation
20W
No. of Pins
3Pins
DC Current Gain hFE Min
12hFE
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MJD112T4G
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability