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MJD340T4G
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 300 V, 10 MHz, 1.56 W, 500 mA, 30 RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.416 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,040.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD340T4G
Newark Part No.31Y2629
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo300V
Collector Emitter Voltage Max300V
Continuous Collector Current500mA
Power Dissipation Pd1.56W
Power Dissipation1.56W
DC Collector Current500mA
Transistor Case StyleTO-252 (DPAK)
DC Current Gain hFE30hFE
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency10MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
300V
Power Dissipation Pd
1.56W
DC Collector Current
500mA
DC Current Gain hFE
30hFE
No. of Pins
4Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
300V
Continuous Collector Current
500mA
Power Dissipation
1.56W
Transistor Case Style
TO-252 (DPAK)
Transistor Mounting
Surface Mount
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability