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MJE181G
Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 1.5 W, TO-225, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.450 |
| 10+ | $0.990 |
| 100+ | $0.702 |
| 500+ | $0.526 |
| 1000+ | $0.458 |
| 2500+ | $0.424 |
| 10000+ | $0.391 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE181G
Newark Part No.26K4457
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current3A
Power Dissipation1.5W
Power Dissipation Pd1.5W
DC Collector Current3A
DC Current Gain hFE5hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-225
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation
1.5W
DC Collector Current
3A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
3A
Power Dissipation Pd
1.5W
DC Current Gain hFE
5hFE
Transistor Case Style
TO-225
Transition Frequency
50MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability