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MMBFJ177LT1G
JFET Transistor, Junction Field Effect, 30 V, -20 mA, 2.5 V, SOT-23, 3 Pin, 150 °C
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| Quantity | Price |
|---|---|
| 1+ | $0.444 |
| 25+ | $0.316 |
| 50+ | $0.312 |
| 100+ | $0.306 |
| 250+ | $0.277 |
| 500+ | $0.248 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ177LT1G
Newark Part No.45J1518
Technical Datasheet
Gate Source Breakdown Voltage Max30V
Breakdown Voltage Vbr30V
Zero Gate Voltage Drain Current Idss Min-1.5mA
Zero Gate Voltage Drain Current Max-20mA
Gate Source Cutoff Voltage Max2.5V
Transistor Case StyleSOT-23
Operating Temperature Max150°C
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeP Channel
Transistor MountingSurface Mount
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBFJ177LT1G is a P-channel JFET designed for analogue switching and chopper applications. The low RDS (ON) provides higher efficiency and extends battery life. The device is encapsulated in a surface-mount package which saves board space.
- -25V Drain-gate voltage
- 25V Gate-source voltage
Applications
Industrial, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
30V
Zero Gate Voltage Drain Current Idss Min
-1.5mA
Gate Source Cutoff Voltage Max
2.5V
Operating Temperature Max
150°C
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Max
-20mA
Transistor Case Style
SOT-23
Transistor Type
JFET
Channel Type
P Channel
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMBFJ177LT1G
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability