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MMBT3904TT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 300 mW, SOT-416, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMMBT3904TT1G
Newark Part No.88H4787
Product RangeMMBTxxxx Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT3904TT1G
Newark Part No.88H4787
Product RangeMMBTxxxx Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Collector Emitter Voltage V(br)ceo40V
Continuous Collector Current200mA
Power Dissipation300mW
Power Dissipation Pd300mW
DC Collector Current200mA
DC Current Gain hFE30hFE
Transistor MountingSurface Mount
Transistor Case StyleSOT-416
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
QualificationAEC-Q101
Product RangeMMBTxxxx Series
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
MMBT3904TT1G is a NPN silicon, surface mount, general purpose transistor.
- Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
- Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Collector current - continuous is 200mAdc max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 200mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 600°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100ADC, RS = 1.0kohm, f = 1.0KHz)
- SOT-416 package
- Junction temperature range from -65 to +150°C
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation
300mW
DC Collector Current
200mA
Transistor Mounting
Surface Mount
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
40V
Continuous Collector Current
200mA
Power Dissipation Pd
300mW
DC Current Gain hFE
30hFE
Transistor Case Style
SOT-416
Transition Frequency
300MHz
Operating Temperature Max
150°C
Product Range
MMBTxxxx Series
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for MMBT3904TT1G
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate