Print Page
MMBTA06LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 500 mA, 300 mW, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMMBTA06LT1G
Newark Part No.98H0741
Product RangeMMBTxxxx Series
Your Part Number
Technical Datasheet
93,263 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.351 |
| 25+ | $0.324 |
| 50+ | $0.303 |
| 100+ | $0.284 |
| 250+ | $0.266 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.255 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBTA06LT1G
Newark Part No.98H0741
Product RangeMMBTxxxx Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current500mA
Power Dissipation Pd300mW
Power Dissipation300mW
DC Collector Current500mA
DC Current Gain hFE100hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transistor Case StyleSOT-23
Transition Frequency100MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Qualification-
Product RangeMMBTxxxx Series
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (14-Jun-2023)
Alternatives for MMBTA06LT1G
4 Products Found
Product Overview
MMBTA06LT1G is a driver transistor.
- Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C)
- Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C
- Collector current - continuous is 500mAdc
- Electrostatic discharge HBM Class 3B, MM Class C, CDM Class IV
- Total device dissipation FR-5 board is 225mW max (TA = 25°C)
- Thermal resistance, junction-to-ambient is 556°C/W max
- DC current gain is 100 min (IC = 10mAdc, VCE = 1.0VDC, TA = 25°C)
- Current-gain - bandwidth product is 100MHz min (IC = 10mA, VCE = 2.0 V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Power Dissipation Pd
300mW
DC Collector Current
500mA
Transistor Mounting
Surface Mount
Transistor Case Style
SOT-23
DC Current Gain hFE Min
100hFE
Qualification
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (14-Jun-2023)
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
500mA
Power Dissipation
300mW
DC Current Gain hFE
100hFE
No. of Pins
3Pins
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
MMBTxxxx Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability