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MMSD701T1G
RF Schottky Diode, Barrier, Single, 70 V, 200 mA, 500 mV, 0.5 pF, SOD-123
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMSD701T1G
Newark Part No.10N9702
Technical Datasheet
Diode ConfigurationSingle
Reverse Voltage70V
Forward Current200mA
Forward Voltage500mV
Forward Voltage VF Max500mV
Diode Capacitance0.5pF
Diode Case StyleSOD-123
No. of Pins2 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMSD701T1G is a Schottky Barrier Diode features extremely low minority carrier lifetime and very low capacitance. The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
- 225mW Forward power dissipation
- Low reverse leakage
- Halogen-free
Applications
RF Communications, Automotive
Technical Specifications
Diode Configuration
Single
Forward Current
200mA
Forward Voltage VF Max
500mV
Diode Case Style
SOD-123
Diode Mounting
Surface Mount
Product Range
-
Reverse Voltage
70V
Forward Voltage
500mV
Diode Capacitance
0.5pF
No. of Pins
2 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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