Print Page
NDS355AN
Power MOSFET, N Channel, 30 V, 1.7 A, 85 mohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
4,633 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.307 |
| 25+ | $0.307 |
| 50+ | $0.307 |
| 100+ | $0.307 |
| 250+ | $0.282 |
| 500+ | $0.282 |
| 1000+ | $0.260 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.31
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS355AN
Newark Part No.58K2018
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.7A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.065ohm
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleSuperSOT
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards, other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
85mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
On Resistance Rds(on)
0.065ohm
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for NDS355AN
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability