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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD6416ANLT4G
Newark Part No.40T1785
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id19A
Drain Source On State Resistance0.074ohm
On Resistance Rds(on)0.068ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd71W
Gate Source Threshold Voltage Max2.2V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.074ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
19A
On Resistance Rds(on)
0.068ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
71W
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability