Print Page
NTH4L014N120M3P
Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTH4L014N120M3P
Newark Part No.57AK6415
Product RangeEliteSiC Series
Technical Datasheet
305 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $24.100 |
| 5+ | $24.100 |
| 10+ | $24.100 |
| 25+ | $24.100 |
| 50+ | $24.100 |
| 100+ | $24.100 |
| 250+ | $24.100 |
Price for:Each
Minimum: 1
Multiple: 1
$24.10
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L014N120M3P
Newark Part No.57AK6415
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id127A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.63V
Power Dissipation686W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
127A
Drain Source On State Resistance
0.014ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.63V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
686W
Product Range
EliteSiC Series
Technical Docs (2)
Alternatives for NTH4L014N120M3P
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability