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NTH4L070N120M3S
Silicon Carbide MOSFET, N Channel, 37 A, 1.2 kV, 0.091 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 50+ | $8.130 |
| 100+ | $7.700 |
| 250+ | $6.700 |
| 500+ | $6.500 |
Price for:Each
Minimum: 60
Multiple: 30
$487.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L070N120M3S
Newark Part No.57AK6420
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id37A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.091ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation252W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.091ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
252W
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate