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NTHL040N120SC1
Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.039 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTHL040N120SC1
Newark Part No.91AH8484
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 250+ | $17.630 |
Price for:Each
Minimum: 450
Multiple: 450
$7,933.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL040N120SC1
Newark Part No.91AH8484
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.039ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.97V
Power Dissipation348W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.039ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.97V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
348W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
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