Print Page
NTMFS10N7D2C
Power MOSFET, N Channel, 100 V, 78 A, 0.0072 ohm, Power 56, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTMFS10N7D2C
Newark Part No.22AC8496
Product RangePowerTrench Series
Technical Datasheet
794 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $6.480 |
| 10+ | $4.970 |
| 25+ | $4.630 |
| 50+ | $4.290 |
| 100+ | $3.950 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$6.48
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS10N7D2C
Newark Part No.22AC8496
Product RangePowerTrench Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id78A
Drain Source On State Resistance0.0072ohm
On Resistance Rds(on)0.0059ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd83W
Gate Source Threshold Voltage Max4V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
NTMFS10N7D2C is a power trench, N‐channel, shielded gate MOSFET. This N-channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Application includes primary DC−DC MOSFET, synchronous rectifier in DC−DC and AC−DC, motor drive and solar.
- Lowers switching noise/EMI
- 100% UIL tested
- Drain to source voltage is 100V (TA = 25°C)
- 50% lower Qrr than other MOSFET suppliers
- Gate to source voltage is ±20V (TA = 25°C)
- Drain current is 78A (continuous, TC = 25°C)
- Single pulse avalanche energy is 216mJ (TC = 25°C)
- Power dissipation is 83W (TC = 25°C)
- Turn-on delay time is 13ns (typ, VDD = 50V, ID = 28A, VGS = 10V, RGEN = 6ohm,TJ = 25°C)
- PQFN8 package, operating and storage junction temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0072ohm
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
PowerTrench Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
78A
On Resistance Rds(on)
0.0059ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
83W
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for NTMFS10N7D2C
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability