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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS5C604NLT1G
Newark Part No.31Y3287
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id276A
On Resistance Rds(on)930µohm
Drain Source On State Resistance930µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.2W
Gate Source Threshold Voltage Max2V
Power Dissipation3.2W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The NTMFS5C604NLT1G is a N-channel Power MOSFET offers 60V drain source voltage and 276A continuous drain current.
- Small footprint (5 x 6mm) for compact design
- Low RDS (ON) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- -55 to 150°C Operating junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
930µohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
276A
Drain Source On State Resistance
930µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.2W
Power Dissipation
3.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability