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NVBG020N090SC1
Silicon Carbide MOSFET, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG020N090SC1
Newark Part No.54AH9511
Product RangeEliteSiC Series
Technical Datasheet
441 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $67.390 |
| 10+ | $57.740 |
| 25+ | $57.410 |
| 50+ | $57.090 |
| 100+ | $56.760 |
| 250+ | $56.740 |
| 500+ | $56.730 |
| 1600+ | $52.030 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$67.39
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG020N090SC1
Newark Part No.54AH9511
Product RangeEliteSiC Series
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id112A
Drain Source Voltage Vds900V
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.6V
Power Dissipation Pd477W
Power Dissipation477W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
900V
Drain Source On State Resistance
0.02ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.6V
Power Dissipation
477W
Product Range
EliteSiC Series
SVHC
To Be Advised
MOSFET Module Configuration
Single
Continuous Drain Current Id
112A
On Resistance Rds(on)
0.02ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
15V
Power Dissipation Pd
477W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability