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NVBG020N120SC1
Silicon Carbide MOSFET, Single, N Channel, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG020N120SC1
Newark Part No.41AH2117
Product RangeEliteSiC Series
Technical Datasheet
717 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $95.430 |
| 10+ | $86.490 |
| 25+ | $86.480 |
| 50+ | $85.860 |
| 100+ | $85.250 |
| 250+ | $85.220 |
| 500+ | $82.570 |
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$95.43
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG020N120SC1
Newark Part No.41AH2117
Product RangeEliteSiC Series
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id98A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Power Dissipation Pd468W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.7V
Power Dissipation468W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Product Overview
NVBG020N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% avalanche tested
- Low effective output capacitance (typ. Coss= 258pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current is 98A at TC = 25°C
- Power dissipation is 3.7W at TC = 25°C
- Single pulse surge drain current capability is 807A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- D2PAK-7L package
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.02ohm
No. of Pins
7Pins
Rds(on) Test Voltage
20V
Power Dissipation
468W
Product Range
EliteSiC Series
MOSFET Module Configuration
Single
Continuous Drain Current Id
98A
On Resistance Rds(on)
0.02ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
468W
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability