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NVBG040N120M3S
Silicon Carbide MOSFET, N Channel, 49 A, 1.2 kV, 0.0405 ohm, D2PAK-7L
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ManufacturerONSEMI
Manufacturer Part NoNVBG040N120M3S
Newark Part No.80AK5051
Product RangeEliteSiC Series
Technical Datasheet
1,200 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $30.740 |
| 10+ | $28.000 |
| 25+ | $27.750 |
| 50+ | $27.500 |
| 100+ | $27.250 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$30.74
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG040N120M3S
Newark Part No.80AK5051
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id49A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0405ohm
Transistor Case StyleD2PAK-7L
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.22V
Power Dissipation297W
Operating Temperature Max175°C
Product RangeEliteSiC Series
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
49A
Drain Source On State Resistance
0.0405ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
3.22V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK-7L
Rds(on) Test Voltage
18V
Power Dissipation
297W
Product Range
EliteSiC Series
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate