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NVBG160N120SC1
Silicon Carbide MOSFET, Single, N Channel, 19.5 A, 1.2 kV, 0.16 ohm, TO-263HV (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG160N120SC1
Newark Part No.91AH8575
Product RangeEliteSiC Series
Technical Datasheet
800 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $13.970 |
| 10+ | $11.780 |
| 25+ | $10.800 |
| 50+ | $9.850 |
| 100+ | $8.870 |
| 250+ | $8.580 |
| 500+ | $8.270 |
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$13.97
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG160N120SC1
Newark Part No.91AH8575
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id19.5A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
19.5A
Drain Source On State Resistance
0.16ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
3V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
136W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability