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NVMFS6H801NT1G
Power MOSFET, N Channel, 80 V, 157 A, 0.0028 ohm, DFN, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 1500+ | $1.570 |
| 3000+ | $1.550 |
Price for:Each (Supplied on Full Reel)
Minimum: 1500
Multiple: 1500
$2,355.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS6H801NT1G
Newark Part No.65AC5192
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id157A
On Resistance Rds(on)0.0023ohm
Drain Source On State Resistance0.0028ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation166W
Power Dissipation Pd166W
No. of Pins5Pins
Operating Temperature Max175°C
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
SVHCLead
Product Overview
- Single N-Channel Power MOSFET
- Small footprint for compact design
- Low RDS(on) to minimize conduction losses
- Low Qg and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- Enhanced optical inspection
- Applications are switching power supplies, power switches and 48V systems
- Motor control, DC/DC converter, load switch are end products
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0023ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
166W
No. of Pins
5Pins
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
N Channel
Continuous Drain Current Id
157A
Drain Source On State Resistance
0.0028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
166W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
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