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NXH40B120MNQ1SNG
Silicon Carbide MOSFET, ThreePack, Three N Channel, 44 A, 1.2 kV, 0.04 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNXH40B120MNQ1SNG
Newark Part No.29AK2764
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 1+ | $147.360 |
| 5+ | $139.310 |
| 10+ | $131.260 |
| 42+ | $123.210 |
Price for:Each
Minimum: 1
Multiple: 1
$147.36
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH40B120MNQ1SNG
Newark Part No.29AK2764
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationThreePack
Channel TypeThree N Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.04ohm
Transistor Case StyleModule
No. of Pins32Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max-
Power Dissipation156W
Operating Temperature Max175°C
Product RangeEliteSiC Series
Technical Specifications
MOSFET Module Configuration
ThreePack
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.04ohm
No. of Pins
32Pins
Gate Source Threshold Voltage Max
-
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Three N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
156W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability