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QEB363
Infrared Emitter, Subminiature, 940 nm, 12 °, T-3/4 (1.8mm), 8 mW/Sr, 1 µs, 1 µs
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 4 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.219 |
| 2500+ | $0.178 |
| 10000+ | $0.174 |
Price for:Each
Minimum: 2000
Multiple: 1000
$438.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoQEB363
Newark Part No.83C0458
Technical Datasheet
Peak Wavelength940nm
Angle of Half Intensity12°
Diode Case StyleT-3/4 (1.8mm)
Radiant Intensity (Ie)8mW/Sr
Rise Time1µs
Fall Time tf1µs
Forward Current If(AV)100mA
Forward Voltage VF Max1.6V
Operating Temperature Min-40°C
Operating Temperature Max100°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Peak Wavelength
940nm
Diode Case Style
T-3/4 (1.8mm)
Rise Time
1µs
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
12°
Radiant Intensity (Ie)
8mW/Sr
Fall Time tf
1µs
Forward Voltage VF Max
1.6V
Operating Temperature Max
100°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate